Laser annealing method, laser annealing device, and crystallized silicon film substrate
US12148616B2 · kind B2 · utility
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Key dates
| Filing date | Jan 16, 2020 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Nov 6, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.