Dry etching method using potential control of grid and substrate
US12148626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2022 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Mar 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching method includes a first step of adsorbing first radicals into a surface of an etching target, wherein the first radicals are contained in first plasma generated from a plasma generator; and a second step of irradiating ion-beams extracted from second plasma generated from the plasma generator onto the surface of the etching target into which the radicals have been adsorbed, thereby desorbing a surface atomic layer of the etching target, wherein the first step is performed such that: a positive potential greater than a potential of the first plasma is applied to one or two selected from first to third grids, while a ground potential is applied to the rest thereof; and a negative potential equal to or lower than a potential of the third grid is applied to a substrate support structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.