Bonding structures and methods for forming the same
US12148725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2022 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Feb 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding structure is provided, including a first substrate; a second substrate disposed opposite the first substrate; a first bonding layer disposed on the first substrate; a second bonding layer disposed on the second substrate and opposite the first bonding layer; and a silver feature disposed between the first bonding layer and the second bonding layer. The silver feature includes a silver nano-twinned structure including parallel twin boundaries. The silver nano-twinned structure includes 90% or more [111] crystal orientation. A method for forming a bonding structure is also provided. Each of steps of forming a first silver feature and second silver feature includes sputtering or evaporation coating. Negative bias ion bombardment is applied to the first silver feature and second silver feature during sputtering or evaporation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.