Patent · US Active

Optically active quantum dot defined by gates

US12148860B2 · kind B2 · utility

0Cited by

2References

6Claims

0Family size

Assignee

Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen · DE

Inventors

Hendrik Bluhm · Aachen, DE
Feng Liu · Ashland, US
Thomas Descamps · Aachen, DE

Key dates

Filing date	Sep 10, 2020
Grant date	Nov 19, 2024
Priority date	—
Expiry date	Dec 7, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG06N10/40
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An electronic component (10) for generating and emitting electromagnetic waves or single photons (48) comprises a layer system (12) of semiconductor materials. A middle layer (13) of gallium arsenide is arranged between a first layer (14) of aluminum gallium arsenide and a second layer (16) of aluminum gallium arsenide. A first outer layer (18) of gallium arsenide is provided on the first layer (14) of aluminum gallium arsenide; A second outer layer (20) of gallium arsenide is provided on the second layer (16) of aluminum gallium arsenide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.