Semiconductor device
US12149053B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 31, 2023 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Mar 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor device, a quantum dot group includes a stack of plural quantum dot layers having different central wavelengths at which respective gains are maximum. A part of or all of the quantum dot layers are stacked so that the central wavelengths sequentially shifts along a stacking direction. The quantum dot group includes a longest wavelength layer group composed of some quantum dot layers including a longest wavelength layer having a longest central wavelength and at least one quantum dot layer stacked on the longest wavelength layer. The longest wavelength layer or the longest wavelength layer group has a larger gain at the central wavelength than the gain at the central wavelength of each of the other quantum dot layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.