Acoustic wave device, multiplexer, and communication apparatus
US12149222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2022 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Feb 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/0057
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode on the LT layer. In the multilayer film, a differential value obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer is negative, and a thickness of the LT layer is less than p and a thickness of the multilayer film is less than p where a pitch of electrode fingers in the IDT electrode is “p”.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.