Carbon nanotube based radio frequency devices
US12150373B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 6, 2020 |
| Grant date | Nov 19, 2024 |
| Priority date | — |
| Expiry date | Aug 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
High-performance carbon nanotube (CNT) based millimeter-wave transistor technologies and demonstrate monolithic millimeter-wave integrated circuits (MMICs) based thereon, and methods and processes for the fabrication thereof are also provided. CNT technologies and MMICs demonstrate improved power efficiency, linearity, noise and dynamic range performance over existing GaAs, SiGe and RF-CMOS technologies. Methods and processes in CNT alignment and deposition, material contact and doping are configured to fabricate high quality CNT arrays beyond the current state-of-the-art and produce high performance RF transistors that are scalable to wafer size to enable fabrication of monolithic integrated circuits based on CNTs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.