Method for polishing single-crystal diamond
US12151337B2 · kind B2 · utility
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Key dates
| Filing date | Apr 25, 2022 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Jul 31, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/04
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Forming an amorphous carbon layer due to lattice distortion of carbon atoms on a surface layer of a single-crystal diamond under a mechanical shear function of a hard abrasive, and generating a chemical reaction between the amorphous carbon layer on the surface layer and the reactive abrasive to achieve quickly removing carbon atoms on the surface layer of the single-crystal diamond due to a local high temperature between abrasive grains and the single-crystal diamond caused by friction at a high speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.