Patent · US Active

Low non-linear loss silicon waveguides with sweep-out diodes

US12153293B2 · kind B2 · utility

0Cited by
6References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 21, 2023
Grant dateNov 26, 2024
Priority date
Expiry dateAug 21, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2202/06
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optical waveguide includes a core region extending substantially along a lengthwise centerline of the optical waveguide, a first cladding region formed along a first side of the core region, and a second cladding region formed along a second side of the core region. The optical waveguide includes a first diode segment and a second diode segment that each include respective portions of the core region, the first cladding region, and the second cladding region. The second diode segment is contiguous with the first diode segment. The first diode segment forms a first diode across the optical waveguide such that a first intrinsic electric field extends across the first diode segment in a first direction, and the second diode segment forms a second diode across the optical waveguide such that a second intrinsic electric field extends across the second diode segment in a second direction opposite the first direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.