Photoresist for semiconductor fabrication
US12153346B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2021 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Jun 7, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes a chemical formula of MaXbLc, where M is a metal, X is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, L is an extreme ultraviolet (EUV) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.