Patent · US Active

In-memory computing using SOT-MRAM

US12154609B2 · kind B2 · utility

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0References

8Claims

0Family size

Assignee

INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

Guozhong Xing · Beijing, CN
Long Liu · Nanhu, CN
Di Wang · Timonium, US
Huai Lin · Beijing, CN
Ming LIU · Baoshan, TW

Key dates

Filing date	Aug 23, 2022
Grant date	Nov 26, 2024
Priority date	—
Expiry date	Apr 19, 2043

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/54
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetoresistive memory cell includes a first magnetic tunnel junction, a second magnetic tunnel junction and a metal layer. The first magnetic tunnel junction and the second magnetic tunnel junction each are disposed on the metal layer; the metal layer is configured to pass write current, a projection line of an easy axis of the first magnetic tunnel junction on a plane where the metal layer is located forms a first angle against a direction of the write current, and a projection line of an easy axis of the second magnetic tunnel junction on the plane where the metal layer is located forms a second angle against a direction opposite to the direction of the write current; the first angle and the second angle are all less than 90°; the first magnetic tunnel junction and the second magnetic tunnel junction are configured to pass read current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.