Read and write circuit of three-dimensional phase-change memory
US12154621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2022 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Mar 31, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A read and write circuit of a three-dimensional phase-change memory including an operation control circuit and a read and write operation circuit connected to each other. The operation control circuit is configured to load a correct operation pulse onto the read and write operation circuit. A read and write unit in the read and write operation circuit is connected to a memory cell and is configured to load the correct operation pulse onto the memory cell corresponding to the three-dimensional phase-change memory and to mirror the correct operation pulse to a mirror current. A bandgap reference source and a hysteresis comparator are connected to a mirror circuit branch. A feedback chopper circuit loop is connected across the memory cell and the mirror circuit branch and is configured to monitor a current flowing through the memory cell in real time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.