Vacuum deposition into trenches and vias
US12154770B2 · kind B2 · utility
0Cited by
3References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 5, 2023 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Jul 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3461
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma deposition apparatus includes a first plasma source that can produce a plasma confined in a magnetic field. The first plasma source includes a closed-loop electrode defining a center region therein and a central axis through the central region, and one or more magnets that are outside an inner surface of the closed-loop electrode. The magnets can produce a magnetic field in the center region. The one or more magnets can be at least partially embedded in the closed-loop electrode. The closed-loop electrode and the magnets can produce a plasma of ions to sputter atoms off a sputtering target or a backing plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.