Semiconductor devices and methods of manufacture
US12154784B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2022 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Sep 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.