Seamless interconnect thresholds using dielectric fluid channels
US12154837B2 · kind B2 · utility
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3References
22Claims
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Key dates
| Filing date | Jan 12, 2022 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Feb 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method may include forming a cavity within a plastic structure with a channel positioned at a perimeter of the cavity, inserting the electronic component into the cavity, dispensing a dielectric fluid into the channel at the perimeter of the cavity, curing the dielectric fluid in situ to secure the electronic component within the cavity with a cured dielectric and printing interconnects for the electronic component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.