Semiconductor image sensor
US12154917B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2020 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Aug 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor image sensor of the present invention comprises a light receiving element formed in a silicon substrate under an insulation film of an SOI substrate comprising the silicon substrate, the insulation film formed on the silicon substrate, and a semiconductor layer formed on the insulation film, and composed of a pn junction diode formed in a vertical direction to a main surface of the silicon substrate and having sensitivity to near-infrared light, and a high voltage generating circuit configured to generate an applied voltage for applying a reverse bias voltage to the pn junction diode, and an impurity concentration of the silicon substrate is in a range of 1×1012/cm3 to 1×1014/cm3, a film thickness is in a range of 300 μm to 700 μm, and the applied voltage is in a range of 10 V to 60 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.