Processor element for quantum information processor
US12154978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2020 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Jun 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/383
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Processor elements are described herein. A processor element comprises a silicon layer. The processor element further comprises one or more conductive electrodes. The processor element further comprises dielectric material having a non-uniform thickness, the dielectric material disposed at least between the silicon layer and the one or more conductive electrodes. In use, when a bias potential is applied to one or more of the conductive electrodes, the positioning of the one or more conductive electrodes and the non-uniform thickness of the dielectric material together define an electric field profile to induce a quantum dot at an interface between the silicon layer and the dielectric layer. Methods are also described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.