Semiconductor device and manufacturing method thereof
US12156404B2 · kind B2 · utility
0Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2021 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Feb 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to one embodiment includes: a semiconductor substrate; a peripheral circuit provided on the semiconductor substrate; and a stacked body provided above the peripheral circuit, which has a memory cell array. The peripheral circuit includes: a metal film including silicon; a silicide film stacked on the metal film; and a barrier metal film stacked on the silicide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.