Method of patterning light emitting layer, and method of manufacturing light-emitting diode device
US12156415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2021 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Apr 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/103
Abstract
A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.