Memory device and manufacturing method thereof
US12156479B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2021 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Nov 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.