Drain-gate voltage excitation and source-drain current acquisition system and method for gas-sensitive organic field effect transistors
US12158439B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2024 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Jun 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/687
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a drain-gate voltage excitation and source-drain current acquisition system and method for gas-sensitive organic field effect transistors (OFETs). The system includes an acquisition device and a gas-sensitive OFET array. The device includes a microcontroller module, a power supply management module, a voltage excitation module, a voltage regulation module, a transimpedance amplifier (TIA) module, a fully-differential low-side current detection module, a voltage acquisition module, a signal transmission module and an array switching module. In the present disclosure, the real-time monitoring of various harmful gases and the performance testing of the gas-sensitive OFETs are realized. The device has two current detection modes, thereby not only stabilizing drain electric potentials, but also enabling drain-source currents to be measured with sufficient accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.