Semiconductor photoresist composition and method of forming patterns using the composition
US12158699B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Mar 30, 2021 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Mar 17, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/2208
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.