Methods and systems for reducing particulate deposition on photomask
US12158707B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | May 19, 2023 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | May 19, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70916
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Particulate deposition rate on a photolithographic mask, particularly of tin (Sn) particles produced within an EUV light source, is reduced by producing turbulence within a radiation source chamber of the EUV light source. Turbulence can be produced by changing the temperature, pressure, and/or gas flow rate within the radiation source chamber. The turbulence reduces the number of particles exiting the EUV light source which could be deposited on the photomask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.