Method of forming semiconductor device
US12159812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2022 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Jan 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/3213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.