Integrated circuit device
US12159832B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2022 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Mar 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) device includes a fin-type active region extending in a first lateral direction on a device region of a substrate. A gate line extends in a second lateral direction on the fin-type active region. The second lateral direction intersects with the first lateral direction. A source/drain region is adjacent to one side of the gate line on the fin-type active region. A gate contact is on the gate line and connected to the gate line. A source/drain contact is on the source/drain region and includes a first segment facing the gate contact and a second segment integrally connected to the first segment. The second segment extends from the first segment in the second lateral direction. In the first lateral direction, a first distance from the first segment to the gate line is greater than a second distance from the second segment to the gate line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.