Semiconductor device having a layer stack, semiconductor arrangement and method for producing the same

US12159854B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Paul Frank · Villach, AT
• Thomas Heinelt · Dresden, DE
• Oliver Schilling · Warstein, DE
• Sven Schmidbauer · Dresden, DE
• Frank Wagner · Reiskirchen, DE

Key dates

• Filing date: Dec 27, 2023
• Grant date: Dec 3, 2024
• Expiry date: Dec 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/37001
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.