Silicon carbide composite wafer and manufacturing method thereof
US12159855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2021 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | May 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10272
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a silicon carbide composite wafer and a manufacturing method thereof. The silicon carbide composite wafer includes (a) a silicon carbide material and (b) a wafer substrate, and the upper surface of the wafer substrate is bonded to the lower surface of the silicon carbide material, wherein the lower surface of the silicon carbide material and/or the upper surface of the wafer substrate undergo a surface modification, thereby allowing the silicon carbide material to be bonded to the wafer substrate directly and firmly. The technical effects of the present invention include achieving strong bonding between the wafer and the substrate, reducing manufacturing process, increasing yield rate, and achieving high industrial applicability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.