Thermal pad, semiconductor chip including the same and method of manufacturing the semiconductor chip
US12159859B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2022 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Jul 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06589
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thermal pad of a semiconductor chip, a semiconductor chip including the thermal pad, and a method of manufacturing the semiconductor chip, the thermal pad including a thermal core in a trench at a lower surface of a semiconductor substrate, the thermal core being configured to receive heat generated from a through silicon via (TSV) vertically extending through the semiconductor substrate; a thermal head connected to the thermal core and protruding from the lower surface of the semiconductor substrate, the thermal head being configured to dissipate the heat in the thermal core; a first insulation layer between an inner surface of the trench and the thermal core; and a second insulation layer between the first insulation layer and the thermal core.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.