Semiconductor including active contact buried portions
US12159911B2 · kind B2 · utility
1Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2021 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Feb 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode provided on the channel pattern and extended in a first direction, and an active contact coupled to the source/drain pattern. The active contact includes a buried portion buried in the source/drain pattern and a contact portion on the buried portion. The buried portion includes an expansion portion provided in a lower portion of the source/drain pattern and a vertical extension portion connecting the contact portion to the expansion portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.