Semiconductor device
US12159938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2022 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Jun 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes; a first fin vertically protruding from a substrate and extending in a first horizontal direction, a second fin vertically protruding from the substrate, an isolation layer contacting side surfaces of the first fin and the second fin, a first lower barrier layer on the first fin, a second lower barrier layer on the second fin, source/drain regions spaced apart in the first horizontal direction on the first lower barrier layer, channel layers disposed between the source/drain regions and vertically spaced apart on the first barrier layer, a gate structure intersecting the first lower barrier layer, surrounding each of the channel layers, and extending in a second horizontal direction, an upper barrier layer on the second lower barrier layer, and first semiconductor layers and second semiconductor layers stacked on the upper barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.