Halide-semiconductor radiation detector
US12159950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2022 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Mar 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A radiation detector includes a halide semiconductor sandwiched between a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.