Light emitting diode

US12159960B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Feng WANG · Xiamen, CN
• Zhanggen XIA · Xiamen, CN
• Yu ZHAN · Shanghai, CN
• En-song Nie · Xiamen, CN
• Anhe HE · Xiamen, CN
• Kang-Wei PENG · Xiamen, CN
• Su-Hui Lin · Xiamen, CN

Key dates

• Filing date: Jul 7, 2023
• Grant date: Dec 3, 2024
• Expiry date: Jul 7, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/142
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A light-emitting diode (LED) includes a light-transmissive substrate having a first surface, an epitaxial structure disposed on the first surface, an insulation structure, and first and second electrodes. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The insulation structure includes a first insulation layer covering the side wall and the upper surface, and a second insulation layer covering a portion of the first surface that is exposed from the epitaxial structure and the first insulation layer. The first insulation layer is formed with first and second holes through which the first and second electrodes are electrically connected to the epitaxial structure. The second insulation layer is formed with an opening. The insulation structure is made of at least one material selected from silicon oxide, silicon nitride, magnesium fluoride, Al2O3, TiO2 and Ti2O5.