Semiconductor device and electronic system including the same
US12160992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2021 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Feb 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
A semiconductor device includes a substrate having a cell region and a connection region, a first stack structure with a plurality of first gate layers and a plurality of first interlayer insulating layers, and a second stack structure with a plurality of second gate layers and a plurality of second interlayer insulating layers. Each of the first gate layers includes a central portion in the cell region of the substrate and an end portion in the connection region of the substrate. Each of the second gate layers includes a central portion in the cell region of the substrate and an end portion in the connection region of the substrate. A thickness difference between the end and central portions of each first gate layer is different from a thickness difference between the end and central portions of each second gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.