Expitaxial semiconductor/superconductor heterostructures

US12161052B2 · kind B2 · utility

Assignees

• Cornell University · IT
• Govmt. of U.S.—Navy · US

Inventors

• Rusen Yan · Ithaca, US
• Guru Bahadur Singh Khalsa · Ithaca, US
• John J. Wright · Evansville, US
• H. Grace Xing · Ithaca, US
• Debdeep Jena · Ithaca, US
• D. Scott Katzer · Alexandria, US
• Neeraj Nepal · Salem, US
• Brian P. Downey · Alexandria, US
• David J. Meyer · Fort Lauderdale, US

Key dates

• Filing date: Mar 6, 2019
• Grant date: Dec 3, 2024
• Expiry date: Dec 26, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Solid-state devices including a layer of a superconductor material epitaxially grown on a crystalline high thermal conductivity substrate, the superconductor material being one of TiNx, ZrNx, HfNx, VNx, NbNx, TaNx, MoNx, WNx, or alloys thereof, and one or more layers of a semiconducting or insulating or metallic material epitaxially grown on the layer of superconductor material, the semiconducting or insulating material being one of a Group III N material or alloys thereof or a Group 4b N material or SiC or ScN or alloys thereof.