Electro-optical device fabricated on a substrate
US12164184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2022 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Oct 17, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0508
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.