Patent · US Active

Semiconductor device

US12165702B2 · kind B2 · utility

0Cited by
4References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 2, 2022
Grant dateDec 10, 2024
Priority date
Expiry dateFeb 14, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/2227
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first regulator for generating a first power supply potential, a second regulator for generating a second power supply potential lower than the first power supply potential, and a static random access memory (SRAM) having a normal operation mode and a resume standby mode. The SRAM includes power supply switching circuits receiving a first power supply potential and a second power supply potential, and a memory array including a plurality of memory cells. When the SRAM is in the normal operation mode, the power switch circuit is controlled so that the first power supply potential is supplied from the power switch circuit to the memory array, and when SRAM is in the resume standby mode, the second power supply potential is supplied from the power switch circuit to the memory array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.