Plasma processing method for manufacturing semiconductor structure
US12165851B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Jul 29, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jan 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor structure includes disposing a wafer in a processing chamber, in which the wafer is laterally surrounded by a focus ring. A plasma is formed in the processing chamber to process the wafer. A thickness of the focus ring is detected. A plasma direction of the plasma over a peripheral region of the wafer is adjusted according to the thickness of the focus ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.