Air spacer surrounding conductive features and method forming same
US12165914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Sep 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes etching a dielectric layer to form an opening. A first conductive feature underlying the dielectric layer is exposed to the opening. A sacrificial spacer layer is deposited to extend into the opening. The sacrificial spacer layer is patterned. A bottom portion of the sacrificial spacer layer at a bottom of the opening is removed to reveal the first conductive feature, and a vertical portion of the sacrificial spacer layer in the opening and on sidewalls of the dielectric layer is left to form a ring. A second conductive feature is formed in the opening. The second conductive feature is encircled by the ring, and is over and electrically coupled to the first conductive feature. At least a portion of the ring is removed to form an air spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.