Method and device for measuring semiconductor multilayer structure based on second harmonic
US12165931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2022 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | May 10, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A measuring method and device based on the second harmonic for the whole area measurement of a wafer comprises three modes: a fixed-point measurement, a scanning measurement, and a combination of the fixed-point measurement and the scanning measurement. The scanning measurement solution measures the entire wafer under the premise of ensuring high measurement efficiency, obtain the position, size and relative density distribution of electrical defects, and achieve locating and checking of abnormal points on the wafer. A new formula system is provided for describing the second harmonic signal, so that the actual measurement results and the theoretical model are unified under the three modes of the fixed-point measurement, the scanning measurement, and the combination of fixed-point measurement and scanning measurement, so that the second harmonic metrology technology is no longer only a qualitative analysis method, but also a quantitative analysis method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.