Patent · US Active

Power semiconductor component and method for producing a power semiconductor component

US12165950B2 · kind B2 · utility

0Cited by

9References

12Claims

0Family size

Assignee

VITESCO TECHNOLOGIES GMBH · DE

Inventors

Christina Quest-Matt · Munich, DE
Detlev Bagung · Bernhardswald, DE
Daniela Wolf · Munich, DE

Key dates

Filing date	Oct 6, 2020
Grant date	Dec 10, 2024
Priority date	—
Expiry date	Oct 6, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH05K3/341
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor component includes at least one power semiconductor device disposed within a housing and a heat sink having an area a exposed on a first surface of the housing. A wiring substrate has a first main surface and a second main surface. A heat dissipation region with increased thermal conductivity is disposed on the second main surface. The heat dissipation region has an area A on the second main surface, and a<A. The housing with the power semiconductor device is disposed on the second main surface of the wiring substrate in such a way that the heat sink is disposed completely on the heat dissipation region and is connected thereto by way of a solder layer. A method for producing a power semiconductor component is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.