Image sensor having a gate electrode on a semiconductor pattern side wall
US12166049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2022 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jun 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/704
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface and a second surface opposite to each other. A semiconductor pattern is disposed on the first surface of the semiconductor substrate and it extends in a first direction perpendicular to the first surface. A buried transmission gate electrode is disposed in a transmission gate trench extending from the first surface of the semiconductor substrate to an interior of the semiconductor substrate. A first gate electrode at least partially surrounds a side wall of the semiconductor pattern and has a ring-shaped horizontal cross-section. A color filter is disposed on the second surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.