Optoelectronic device having an array of germanium-based diodes with low dark current
US12166063B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Dec 2, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Mar 26, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device includes an array of germanium-based photodiodes including a stack of semiconductor layers, made from germanium, trenches, and a passivation semiconductor layer, made from silicon. Each photodiode includes a silicon-germanium peripheral zone in the semiconductor portion formed through an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of the semiconductor portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.