Thin film laminate structure, integrated device including the same, and method of manufacturing the thin film laminate structure
US12166066B2 · kind B2 · utility
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29Claims
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Key dates
| Filing date | Jul 8, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Dec 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/40
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film laminate structure, an integrated device including the same, and a method of manufacturing the thin film laminate structure are provided. The thin film laminate structure includes two or more dielectric layers, wherein at least one of the dielectric layers of the thin film laminate structure includes a compound represented by Formula 1 and having a perovskite-type crystal structure having a B/B′ composition ratio different from that of a remainder of the dielectric layers: AB1-xB′xO3 <Formula 1>
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.