Reverse conducting IGBT with controlled anode injection
US12166111B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 18, 2020 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Apr 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
We herein describe a semiconductor device comprising a first element portion formed on a substrate, the first element portion being an operating region of an insulated gate bipolar transistor (IGBT) and a second element portion formed on the substrate, the second element portion being an operating region of a diode. The first element portion comprises a first collector region of a second conductivity type, a drift region of a first conductivity type located over the first collector region, and formed by the semiconductor substrate, a first body region of a first conductivity type located over the drift region, a second body region of a second conductivity type located over the drift region, at least one first contact region of a first conductivity type located above the second body region and having a higher doping concentration compared to the first body region, at least one second contact region of a second conductivity type located laterally adjacent to the at least one first contact region, the at least one second contact region having a higher doping concentration than the second body region, a first plurality of trenches extending from a surface through the second body region…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.