Semiconductor device structures and methods of manufacturing the same
US12166114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Nov 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.