Array structure of capacitors, method for manufacturing array structure of capacitors, and dynamic random access memory

US12167585B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventors

• Sen Li · Hefei, CN
• Qiang Wan · Hefei, CN
• Tao Liu · Beijing, CN
• Penghui Xu · Hefei, CN

Key dates

• Filing date: Jan 14, 2022
• Grant date: Dec 10, 2024
• Expiry date: Dec 15, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/315

Abstract

An array structure of capacitors are provided. The array structure of capacitors includes a substrate and a first connection pad, a second connection pad, a first capacitive structure and a second capacitive structure that are disposed on the substrate. The first capacitive structure is disposed outside the second capacitive structure and adjacent to an edge of the substrate. The bottom surface of the first capacitive structure towards the substrate and the top surface of the first connection pad are disposed at intervals.