Semiconductor memory device and method of fabricating the same
US12167587B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2022 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Oct 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.