Semiconductor device and method of manufacturing the same
US12167595B2 · kind B2 · utility
0Cited by
1References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 28, 2022 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Apr 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a stacked film including a plurality of electrode layers and a plurality of insulating layers alternately stacked in a first direction and a columnar portion including a charge storage layer and a first semiconductor layer and extending in the first direction in the stacked film. The device further includes a second semiconductor layer provided on the stacked film and the columnar portion, and at least a part of regions in the second semiconductor layer contains phosphorus having an atomic concentration of 1.0×1021/cm3 or more and hydrogen having an atomic concentration of 1.0×1019/cm3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.