Vacuum deposition into trenches and vias and etch of trenches and via
US12170185B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 8, 2023 |
| Grant date | Dec 17, 2024 |
| Priority date | — |
| Expiry date | Jul 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. The one or more magnets can produce the magnetic field in the center region. The closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. A collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.