Image sensor with pixel separation structure
US12170296B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2021 |
| Grant date | Dec 17, 2024 |
| Priority date | — |
| Expiry date | Mar 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.